Infineon IRFP4137PBF N-Channel Power MOSFET: Datasheet, Application Circuit, and Replacement Guide

The Infineon IRFP4137PBF is a high-power N-Channel MOSFET renowned for its robustness and efficiency in demanding switching applications. This article provides a detailed overview of its key specifications, a typical application circuit, and guidance for finding a suitable replacement.

Datasheet Overview and Key Specifications

The IRFP4137PBF is built on Infineon's advanced technology, offering a excellent balance of high voltage capability, low on-state resistance, and fast switching speeds. Its primary specifications include:

Drain-Source Voltage (V_DS): 250 V

Continuous Drain Current (I_D): 42 A at 25°C

Pulsed Drain Current (I_DM): 160 A

On-State Resistance (R_DS(on)): Max. 0.045 Ω at V_GS = 10 V, I_D = 21 A

Gate-Source Voltage (V_GS): ±20 V

Total Gate Charge (Q_g): Typical 120 nC

Avalanche Energy Rated (E_AS): This specification indicates its ruggedness and ability to handle unclamped inductive switching (UIS) events, a critical feature for reliability in circuits with inductive loads like motors.

These characteristics make it an ideal choice for applications such as switch-mode power supplies (SMPS), motor controllers, inverters, and high-power audio amplifiers.

Typical Application Circuit: A Simplified Motor Driver

A common use case for the IRFP4137PBF is in an H-Bridge motor control circuit. The following is a simplified half-bridge configuration for DC motor control.


Components:

MCU: A microcontroller unit (e.g., Arduino, STM32) providing the control signal (PWM).

Gate Driver IC: A dedicated MOSFET driver (e.g., IR2110) is essential to rapidly charge and discharge the large gate capacitance of the IRFP4137PBF, ensuring fast switching and minimizing heat generation.

N-Channel MOSFET (Q1): The IRFP4137PBF.

DC Motor: The inductive load being controlled.

Flyback Diode (D1): A fast recovery diode critical for suppressing voltage spikes generated when the motor is switched off, protecting the MOSFET from damage.

Power Supply (V_DD): The high-current supply for the motor (e.g., 12V-48V).

Operation:

The MCU generates a PWM signal. The gate driver IC translates this logic-level signal into a higher-voltage (typically 10V-15V) pulse to fully enhance the MOSFET. When the PWM signal is high, the MOSFET turns on, allowing current to flow through the motor. When the signal goes low, the MOSFET turns off. The stored energy in the motor's inductance causes a current to flow through the flyback diode (D1), safely dissipating the energy.

Replacement Guide

When the IRFP4137PBF is unavailable, selecting a correct replacement is crucial. Key parameters to match are:

1. Voltage Rating (V_DSS): Choose a device with a V_DSS equal to or higher than the original.

2. Current Rating (I_D): The replacement's continuous current rating should meet or exceed the original's.

3. On-State Resistance (R_DS(on)): A similar or lower value is vital for efficiency and thermal performance.

4. Gate Charge (Q_g): A significantly different Q_g may require modifications to the gate drive circuit.

5. Package (TO-247): Ensure the package is compatible for mounting.

Potential Replacements:

Infineon IRFP4232PBF: A very close alternative with similar V_DS (250V) and R_DS(on).

STMicroelectronics STW75N30M2: 300V, 75A, lower R_DS(on). A robust upgrade.

ON Semiconductor FDPF44N25: 250V, 44A, suitable for similar applications.

Always consult the respective datasheets to confirm all parameters and pinout compatibility before substitution.

ICGOODFIND Summary

The Infineon IRFP4137PBF remains a highly reliable and powerful MOSFET for high-current switching tasks. Its robust avalanche ruggedness and low on-resistance make it a preferred component in power electronics design. Understanding its key specs from the datasheet, implementing it with a proper gate driver and protection circuitry, and knowing how to select an equivalent part are fundamental skills for engineers and hobbyists alike.

Keywords: Power MOSFET, Switching Application, Unclamped Inductive Switching (UIS), Gate Driver, H-Bridge Circuit.