Infineon TZ740N22KOF: A High-Performance 22 mΩ SiC MOSFET Module for Demanding Industrial Applications
The relentless pursuit of higher efficiency, greater power density, and enhanced reliability in industrial systems is driving the widespread adoption of Silicon Carbide (SiC) technology. At the forefront of this revolution is Infineon Technologies with its TZ740N22KOF, a state-of-the-art SiC MOSFET module engineered to meet the rigorous demands of modern industrial applications. This module sets a new benchmark by combining ultra-low power loss with robust performance in a compact footprint.
Unmatched Performance Through Advanced SiC Technology
The core of the TZ740N22KOF's superiority lies in its use of second-generation SiC MOSFET technology. This advanced semiconductor material offers fundamental advantages over traditional silicon, including a tenfold higher breakdown electric field and three times higher thermal conductivity. For the end user, this translates into significantly lower switching and conduction losses. The module's ultra-low typical on-state resistance (RDS(on)) of just 22 mΩ is a key figure, enabling higher efficiency by minimizing energy wasted as heat during operation. This characteristic is particularly crucial for high-current applications, allowing for more compact cooling systems and contributing to a higher overall power density in the system design.
Designed for the Most Demanding Environments
The TZ740N22KOF is not just about raw performance; it is built for durability. It is specifically targeted at challenging industrial environments such as:
Industrial Motor Drives: Enabling faster switching frequencies, which lead to more precise control, higher efficiency, and reduced motor acoustical noise.
Uninterruptible Power Supplies (UPS): Providing higher efficiency in power conversion, which is critical for reducing operational costs and heat generation in data centers and industrial facilities.
Solar Inverters and Energy Storage Systems: Maximizing energy harvest and conversion efficiency, directly impacting the levelized cost of energy (LCOE).
Industrial SMPS: Facilitating the development of smaller, lighter, and more efficient power supplies for heavy machinery.
The module boasts a high short-circuit ruggedness and is offered with an optional pre-applied Thermal Interface Material (TIM), which simplifies the assembly process, improves thermal performance, and enhances reliability by eliminating a potential failure point.
A Comprehensive Solution for System Designers
Infineon has designed the TZ740N22KOF to be a drop-in solution for upgrading existing systems or designing new, cutting-edge platforms. Its low inductive and versatile .XT package ensures that the superior performance of the SiC chips is not compromised by parasitic elements. This allows engineers to push switching frequencies to new heights without sacrificing electromagnetic compatibility (EMC) or incurring punitive switching losses. The result is the ability to shrink the size of passive components like inductors and capacitors, leading to overall system miniaturization and cost savings.
ICGOOODFIND: The Infineon TZ740N22KOF represents a significant leap forward in power semiconductor technology. By delivering an industry-leading combination of ultra-low 22 mΩ RDS(on), high switching speed, and superior ruggedness in a robust package, it provides engineers with the key to unlocking new levels of efficiency and power density in the most demanding industrial applications, from heavy automation to renewable energy infrastructure.
Keywords:
1. SiC MOSFET
2. Ultra-low RDS(on)
3. High Power Density
4. Industrial Applications
5. Efficiency
