Infineon BF998E6327: N-Channel Dual-Gate MOSFET for VHF/UHF Amplifier and Mixer Applications

The Infineon BF998E6327 stands as a cornerstone component in the realm of radio frequency (RF) design, specifically engineered for very high frequency (VHF) and ultra-high frequency (UHF) applications. This N-Channel, dual-gate enhancement mode MOSFET is a highly versatile and robust solution, primarily leveraged in critical stages such as low-noise amplifiers (LNAs), mixers, and AGC (Automatic Gain Control) circuits found in communication receivers, television tuners, and other RF equipment.

A key architectural feature of the BF998E6327 is its dual-gate structure. This design provides two independent control gates, which offers significant advantages over single-gate transistors. The first gate (G1) is typically used as the signal input, while the second gate (G2) serves as a control point for gain modulation or as an injection point for a local oscillator (LO) signal in mixer configurations. This separation allows for excellent isolation between the input and output circuits, minimizing unwanted feedback and enhancing stage stability. Furthermore, it enables efficient AGC, where a control voltage applied to G2 can smoothly vary the device's gain over a wide range without significantly degrading other performance parameters.

The device is optimized for high-frequency performance, offering low noise figure and high forward transfer admittance (|Yfs|), which are critical for achieving high gain and superior signal clarity in the first amplifier stage of a receiver. Its low cross-modulation characteristics also make it highly resistant to interference, ensuring clean signal amplification even in crowded RF environments. The BF998E6327 is supplied in the compact, surface-mount SOT-143 package, making it suitable for modern, high-density PCB designs.

ICGOOODFIND: The Infineon BF998E6327 is an exceptionally versatile and high-performance dual-gate MOSFET that remains a preferred choice for RF designers. Its unique architecture provides outstanding isolation, efficient gain control, and low-noise amplification, making it an indispensable component for building high-quality VHF and UHF receiver front-ends and mixer stages.

Keywords: Dual-Gate MOSFET, VHF/UHF Amplifier, Low-Noise Amplifier (LNA), RF Mixer, Automatic Gain Control (AGC)