Infineon IR2010STRPBF: High- and Low-Side Driver IC for Power MOSFETs and IGBTs
In the realm of power electronics, the efficient and reliable control of power switches like MOSFETs and IGBTs is paramount. The Infineon IR2010STRPBF stands as a pivotal component designed specifically to drive both high-side and low-side N-channel power MOSFETs and IGBTs in bridge configurations. This driver IC is engineered to deliver robust performance, making it an ideal choice for applications such as motor drives, switch-mode power supplies (SMPS), and uninterruptible power supplies (UPS).
A key feature of the IR2010STRPBF is its floating channel design for bootstrap operation, which simplifies high-side driving by allowing the use of a bootstrap capacitor and diode. This eliminates the need for an isolated power supply, reducing system complexity and cost. The IC supports a wide high-side operating voltage range of up to 600V, ensuring compatibility with high-power circuits. Additionally, it offers a sophisticated dead-time control mechanism, which prevents shoot-through currents by ensuring that both the high-side and low-side switches are never turned on simultaneously. This protection is critical for enhancing system reliability and preventing device failure.
The IR2010STRPBF integrates cross-conduction prevention and undervoltage lockout (UVLO) for both channels. UVLO safeguards the power switches by keeping the outputs low when the supply voltage is insufficient, thereby avoiding inefficient operation. With a high peak output current of 290mA (source) and 600mA (sink), this driver can swiftly charge and discharge the gate capacitances of power devices, minimizing switching losses and improving overall efficiency. The fast switching capabilities ensure reduced thermal stress and higher frequency operation.
Housed in a compact SOIC-8 package, the IR2010STRPBF is suitable for space-constrained designs while providing excellent thermal performance. Its robust level-shifting technique ensures accurate signal transmission from the logic level to the high-side driver, even under noisy conditions typical in high-power environments. This makes the IC highly resilient to voltage transients and ground fluctuations.
ICGOOODFIND Summary:
The Infineon IR2010STRPBF is a high-performance, high-voltage driver IC that simplifies the control of half-bridge circuits. Its integrated bootstrap functionality, dead-time control, and strong output current capabilities make it a versatile solution for driving power MOSFETs and IGBTs efficiently and safely in demanding applications.
Keywords:
High-Side Driver, Bootstrap Operation, Dead-Time Control, Undervoltage Lockout, Gate Driving
